Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double Acceptor

I. Mizushima; A. Murakoshi; M. Watanabe; M. Yoshiki; M. Hotta; M. Kashiwagi

doi:https://doi.org/10.7567/SSDM.1993.S-II-7

[S-II-7] Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double Acceptor

I. Mizushima、A. Murakoshi、M. Watanabe、M. Yoshiki、M. Hotta、M. Kashiwagi (1.ULSI Research Laboratories, Environmental Engineering Laboratory, Research and Development Center, Toshiba Corp.)

https://doi.org/10.7567/SSDM.1993.S-II-7

1993 International Conference on Solid State Devices and Materials

[S-II-7] Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double Acceptor