[S-II-7] Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double Acceptor

I. Mizushima, A. Murakoshi, M. Watanabe, M. Yoshiki, M. Hotta, M. Kashiwagi (1.ULSI Research Laboratories, Environmental Engineering Laboratory, Research and Development Center, Toshiba Corp.)

https://doi.org/10.7567/SSDM.1993.S-II-7