[S-III-4] Influence of the Structural Transition Layer on the Reliability of Thin Gate Oxides

Eiji HASEGAWA, Koichi AKIMOTO, Masaru TSUKIJI Taishi KUBOTA, Akihiko ISHITANI (1.ULSI Device Development Laboratories, NEC Corporation, 2.Microelectronics Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1993.S-III-4