[S-IV-4] Behaviro of Substrate-Originating Si Atoms during Chemical Vapor Deposition and Subsequent Active Oxygen Annealing of Tantalum Pentoxide Film

Satoshi TANIMOTO、Yushi SHICHI、Koichi KUROIWA、Yasuo TARUI (1.Electronics Research Laboratory, Nissan Motor Co., Ltd.、2.Surface Analysis Section, Nissan ARC., Ltd.、3.Department of Electronic Engineering, Tokyo University of Agriculture and Technology、4.The School of Science and Engineering, Waseda University)

https://doi.org/10.7567/SSDM.1993.S-IV-4