[S-IV-6] Improved Resistance to Oxidation of Silicon Nitride by In-Situ Annealing for the NO Capacitor Dielectric Film

S. H. Kang, S. T. Kim, D. H. Lee, K. H. Kim, S. T. Ahn (1.Advanced Technology Center, Samsung Electronics Co. LTD.)

https://doi.org/10.7567/SSDM.1993.S-IV-6