Comparison of Electrical and Optical Properties of n-i-i and p-n ZnSSe Heterostructure Diodes

Yoshihisa FUJII; Ikuo SUEMUNE; Ken-ichi OKAMOTO; Masahiro FUJIMOTO; Kazuhiro OKAMURA

doi:https://doi.org/10.7567/SSDM.1993.S-VI-10

[S-VI-10] Comparison of Electrical and Optical Properties of n-i-i and p-n ZnSSe Heterostructure Diodes

Yoshihisa FUJII、Ikuo SUEMUNE、Ken-ichi OKAMOTO、Masahiro FUJIMOTO、Kazuhiro OKAMURA (1.Faculty of Engineering, Hiroshima University、2.Research Institute for Electronic Science, Hokkaido University)

https://doi.org/10.7567/SSDM.1993.S-VI-10

1993 International Conference on Solid State Devices and Materials

[S-VI-10] Comparison of Electrical and Optical Properties of n-i-i and p-n ZnSSe Heterostructure Diodes