ZnSe-Based Laser Diodes on p-GaAs with Current Confinement by Nitrogen Ion Bombardment

Shigeo HAYASHI; Kazuhiro OHKAWA; Ayumu TSUJIMURA; Shigeo YOSHII; Hidemi TAKEISHI; Tsuneo MITSUYU; Yasuhito TAKAHASHI; Tadashi NARUSAWA

doi:https://doi.org/10.7567/SSDM.1993.S-VI-8

[S-VI-8] ZnSe-Based Laser Diodes on p-GaAs with Current Confinement by Nitrogen Ion Bombardment

Shigeo HAYASHI、Kazuhiro OHKAWA、Ayumu TSUJIMURA、Shigeo YOSHII、Hidemi TAKEISHI、Tsuneo MITSUYU、Yasuhito TAKAHASHI、Tadashi NARUSAWA (1.Central Research Laboratories, Matsushita Electric Ind. Co., Ltd.、2.Semiconductor Research Laboratories, Matsushita Electric Ind. Co., Ltd.)

https://doi.org/10.7567/SSDM.1993.S-VI-8

1993 International Conference on Solid State Devices and Materials

[S-VI-8] ZnSe-Based Laser Diodes on p-GaAs with Current Confinement by Nitrogen Ion Bombardment