Effects of H-Termination of Si(100) Surfaces on Electrical Characteristics of Metal/Silicon Interfaces

S. Zaima; J. Kojima; M. Hayashi; H. Ikeda; H. Iwano; Y. Yasuda

doi:https://doi.org/10.7567/SSDM.1994.A-1-3

1994 International Conference on Solid State Devices and Materials

Aug 23, 1994 - Aug 26, 1994
Pacifico Yokohama, Yokohama, Japan

[A-1-3] Effects of H-Termination of Si(100) Surfaces on Electrical Characteristics of Metal/Silicon Interfaces

S. Zaima, J. Kojima, M. Hayashi, H. Ikeda, H. Iwano, Y. Yasuda (1.Department of Crystalline Materials Science, School of Engineering, Nagoya University)

https://doi.org/10.7567/SSDM.1994.A-1-3

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