[A-1-5] An Inexpensive Diffusion Barrier Technology for Polycide Gate Electrodes with an SiN Layer Formed with ECR Nitrogen Plasma

Tetsuo Hosoya、Katsuyuki Machida、Kazuo Imai、Eisuke Arai (1.NTT LSI Laboratories)

https://doi.org/10.7567/SSDM.1994.A-1-5