[A-3-1] Improvement of Poly-Si TFT Characteristics by Hydrogenation at SiO2/Poly-Si Interfaces, Characterized by TDS Measurement of Deuterium Terminated Poly-Si

K. Hamada、S. Saito、K. Sera、F. Okumura、F. Uesugi、I. Nishiyama (1.ULSI Device Development Labs., Functional Device Res. Labs., Microelectronics Res. Labs. NEC Corporation)

https://doi.org/10.7567/SSDM.1994.A-3-1