[A-6-4] Study of Initial Growth Mechanism in TEOS-O3 SiO2 Using ATR-FTIR

T. Yoshie、T. Usami、K. Shimokawa、M. Yoshimaru (1.VLSI R&D Center, Oki Electric Industry Co., Ltd.)

https://doi.org/10.7567/SSDM.1994.A-6-4