Characterization of the Porous Boron δ-Doped Si Superlattice

T. C. Chang; M. Y. Hsu; C. Y. Chang; C. P. Lee; T. G. Jung; W. C. Tsai; G. W. Hunag; Y. J. Mei

doi:https://doi.org/10.7567/SSDM.1994.A-8-1

1994 International Conference on Solid State Devices and Materials

Aug 23, 1994 - Aug 26, 1994
Pacifico Yokohama, Yokohama, Japan

[A-8-1] Characterization of the Porous Boron δ-Doped Si Superlattice

T. C. Chang, M. Y. Hsu, C. Y. Chang, C. P. Lee, T. G. Jung, W. C. Tsai, G. W. Hunag, Y. J. Mei (1.Institute of Electronics, National Chiao Tung University)

https://doi.org/10.7567/SSDM.1994.A-8-1

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