Initial Growth Stages of Si on Ge and Ge on Si for Atomic-Layer Epitaxy Control Using SiH4 and GeH4 Gases

Masao SAKURABA; Junichi MUROTA; Takeshi WATANABE; Yasuji SAWADA

doi:https://doi.org/10.7567/SSDM.1994.A-9-5

[A-9-5] Initial Growth Stages of Si on Ge and Ge on Si for Atomic-Layer Epitaxy Control Using SiH4 and GeH4 Gases

Masao SAKURABA, Junichi MUROTA, Takeshi WATANABE, Yasuji SAWADA (1.Laboratory for Microelectronics, Research Institute of Electrical Communication Tohoku University)

https://doi.org/10.7567/SSDM.1994.A-9-5

1994 International Conference on Solid State Devices and Materials

[A-9-5] Initial Growth Stages of Si on Ge and Ge on Si for Atomic-Layer Epitaxy Control Using SiH4 and GeH4 Gases