The Japan Society of Applied Physics

[A-9-5] Initial Growth Stages of Si on Ge and Ge on Si for Atomic-Layer Epitaxy Control Using SiH4 and GeH4 Gases

Masao SAKURABA、Junichi MUROTA、Takeshi WATANABE、Yasuji SAWADA (1.Laboratory for Microelectronics, Research Institute of Electrical Communication Tohoku University)

https://doi.org/10.7567/SSDM.1994.A-9-5