Initial Growth Stages of Si on Ge and Ge on Si for Atomic-Layer Epitaxy Control Using SiH4 and GeH4 Gases

Masao SAKURABA; Junichi MUROTA; Takeshi WATANABE; Yasuji SAWADA

doi:https://doi.org/10.7567/SSDM.1994.A-9-5

1994 International Conference on Solid State Devices and Materials

1994年8月23日〜 1994年8月26日
Pacifico Yokohama, Yokohama, Japan

[A-9-5] Initial Growth Stages of Si on Ge and Ge on Si for Atomic-Layer Epitaxy Control Using SiH4 and GeH4 Gases

Masao SAKURABA、Junichi MUROTA、Takeshi WATANABE、Yasuji SAWADA (1.Laboratory for Microelectronics, Research Institute of Electrical Communication Tohoku University)

https://doi.org/10.7567/SSDM.1994.A-9-5

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