[B-1-1] Injection Efficiency Enhancement in Dynamic Trench Gate Emitter (DTGE) for 4500 V MOS Gate Transistor (IEGT)

Mitsuhiko Kitagawa、Akio Nakagawa、Ichiro Omura (1.Research and Development Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1994.B-1-1