[C-10-4] High Temperature Void Formation Induced by H2O in Al Interconnection with SiN/PSG Passivation

T. Ueda、S. Ueda、K. Yano、N. Nomura (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.1994.C-10-4