Characterization of Ballistic Transport in a Resonant-Tunneling Hot-Electron Transistor Using Pulsed High Magnetic Fields up to 42 T

T. Strutz; T. Takamasu; N. Miura; K. Imamura; L. Eaves

doi:https://doi.org/10.7567/SSDM.1994.C-2-2

[C-2-2] Characterization of Ballistic Transport in a Resonant-Tunneling Hot-Electron Transistor Using Pulsed High Magnetic Fields up to 42 T

T. Strutz、T. Takamasu、N. Miura、K. Imamura、L. Eaves (1.Institute for Solid State Physics, The University of Tokyo、2.Fujitsu Limited、3.Department of Physics, University of Nottingham)

https://doi.org/10.7567/SSDM.1994.C-2-2

1994 International Conference on Solid State Devices and Materials

[C-2-2] Characterization of Ballistic Transport in a Resonant-Tunneling Hot-Electron Transistor Using Pulsed High Magnetic Fields up to 42 T