The Japan Society of Applied Physics

[C-5-5] Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel Electrochemical Process

N.-J. Wu、T. Hashizume、H. Hasegawa、Y. Amemiya (1.Department of Electrical Engineering、2.Research Center for Interface Quantum Electronics, Hokkaido University)

https://doi.org/10.7567/SSDM.1994.C-5-5