Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel Electrochemical Process

N.-J. Wu; T. Hashizume; H. Hasegawa; Y. Amemiya

doi:https://doi.org/10.7567/SSDM.1994.C-5-5

[C-5-5] Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel Electrochemical Process

N.-J. Wu、T. Hashizume、H. Hasegawa、Y. Amemiya (1.Department of Electrical Engineering、2.Research Center for Interface Quantum Electronics, Hokkaido University)

https://doi.org/10.7567/SSDM.1994.C-5-5

1994 International Conference on Solid State Devices and Materials

[C-5-5] Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel Electrochemical Process