The Characterization of Defect States Responsible for Leakage Current in Tantalum Pentoxide Films for Very High Density DRAM Applications

W. S. Lau; T. S. Tan; N. P. Sandler; B. S. Page

doi:https://doi.org/10.7567/SSDM.1994.C-7-4

[C-7-4] The Characterization of Defect States Responsible for Leakage Current in Tantalum Pentoxide Films for Very High Density DRAM Applications

W. S. Lau, T. S. Tan, N. P. Sandler, B. S. Page (1.Department of Electrical Engineering, National University of Singapore, 2.CVD Division, Lam Research Corporation)

https://doi.org/10.7567/SSDM.1994.C-7-4

1994 International Conference on Solid State Devices and Materials

[C-7-4] The Characterization of Defect States Responsible for Leakage Current in Tantalum Pentoxide Films for Very High Density DRAM Applications