[C-9-3] Highly Reliable N2O-Oxynitrided Tunnel Oxides for Flash Memory

Masahiro Ushiyama、Masataka Kato、Tetsuo Adachi、Hitoshi Kume、Naoki Miyamoto、Toshiyuki Mine、Kiyoshi Ogata、Takashi Nishida、Yuzuru Ohji (1.Central Research Lab., Hitachi, Ltd.、2.Hitachi Device Engineering Co.、3.Production Engineering Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1994.C-9-3