LEED Analysis on Initial Stages of Ge Growth on Si(111)(1x1)-As and As-Desorbed Si(111)(1x1) Surfaces

Haruyuki YASUDA; Daisuke ABE; Shigehiko HASEGAWA; Kenzo MAEHASHI; Hisao NAKASHIMA

doi:https://doi.org/10.7567/SSDM.1994.PA-3-2

1994 International Conference on Solid State Devices and Materials

1994年8月23日〜 1994年8月26日
Pacifico Yokohama, Yokohama, Japan

[PA-3-2] LEED Analysis on Initial Stages of Ge Growth on Si(111)(1x1)-As and As-Desorbed Si(111)(1x1) Surfaces

Haruyuki YASUDA、Daisuke ABE、Shigehiko HASEGAWA、Kenzo MAEHASHI、Hisao NAKASHIMA (1.The Institute of Scientific and Industrial Research, Osaka University)

https://doi.org/10.7567/SSDM.1994.PA-3-2

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