LEED Analysis on Initial Stages of Ge Growth on Si(111)(1x1)-As and As-Desorbed Si(111)(1x1) Surfaces

Haruyuki YASUDA; Daisuke ABE; Shigehiko HASEGAWA; Kenzo MAEHASHI; Hisao NAKASHIMA

doi:https://doi.org/10.7567/SSDM.1994.PA-3-2

1994 International Conference on Solid State Devices and Materials

Aug 23, 1994 - Aug 26, 1994
Pacifico Yokohama, Yokohama, Japan

[PA-3-2] LEED Analysis on Initial Stages of Ge Growth on Si(111)(1x1)-As and As-Desorbed Si(111)(1x1) Surfaces

Haruyuki YASUDA, Daisuke ABE, Shigehiko HASEGAWA, Kenzo MAEHASHI, Hisao NAKASHIMA (1.The Institute of Scientific and Industrial Research, Osaka University)

https://doi.org/10.7567/SSDM.1994.PA-3-2

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