Extremely Low Energy EBE-Epitaxy of GaAs on the Fluorides

S. M. Hwang; A. Izumi; K. Kawasaki; K. Tsutsui

doi:https://doi.org/10.7567/SSDM.1994.PB-1-9

1994 International Conference on Solid State Devices and Materials

1994年8月23日〜 1994年8月26日
Pacifico Yokohama, Yokohama, Japan

[PB-1-9] Extremely Low Energy EBE-Epitaxy of GaAs on the Fluorides

S. M. Hwang、A. Izumi、K. Kawasaki、K. Tsutsui (1.Tokyo Institute of Technology Dept. of Appl. Electronics, Interdisciplinary Graduate School of Science & Engin.)

https://doi.org/10.7567/SSDM.1994.PB-1-9

▲