A Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon Interface Control Layer and Its Application to Near-Surface Quantum Wells

Satoshi Kodama; Satoshi Koyanagi; Hideki Hasegawa

doi:https://doi.org/10.7567/SSDM.1994.PB-2-1

[PB-2-1] A Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon Interface Control Layer and Its Application to Near-Surface Quantum Wells

Satoshi Kodama、Satoshi Koyanagi、Hideki Hasegawa (1.Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University)

https://doi.org/10.7567/SSDM.1994.PB-2-1

1994 International Conference on Solid State Devices and Materials

[PB-2-1] A Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon Interface Control Layer and Its Application to Near-Surface Quantum Wells