C-V and EBIC Study of Direct Schottky Contacts to Quantum Wells Formed by In-Situ Selective Electrochemical Process

T. Hashizume; H. Hasegawa; N.-J. Wu

doi:https://doi.org/10.7567/SSDM.1994.PB-2-11

[PB-2-11] C-V and EBIC Study of Direct Schottky Contacts to Quantum Wells Formed by In-Situ Selective Electrochemical Process

T. Hashizume、H. Hasegawa、N.-J. Wu (1.Hokkaido Polytechnic College、2.Research Center for Interface Quantum Electronics, Hokkaido University、3.Department of Electrical Engineering, Faculty of Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1994.PB-2-11

1994 International Conference on Solid State Devices and Materials

[PB-2-11] C-V and EBIC Study of Direct Schottky Contacts to Quantum Wells Formed by In-Situ Selective Electrochemical Process