Characterization of P- and N-type Impurity Diffusions in GaAs from Doped Silica Films

Kazuya Okamoto; Atsushi Yamada; Yukihiro Shimogaki; Yoshiaki Nakano; Kunio Tada

doi:https://doi.org/10.7567/SSDM.1994.PB-2-3

1994 International Conference on Solid State Devices and Materials

1994年8月23日〜 1994年8月26日
Pacifico Yokohama, Yokohama, Japan

[PB-2-3] Characterization of P- and N-type Impurity Diffusions in GaAs from Doped Silica Films

Kazuya Okamoto、Atsushi Yamada、Yukihiro Shimogaki、Yoshiaki Nakano、Kunio Tada (1.Central Research Laboratory, Nikon Corporation、2.Faculty of Engineering, University of Tokyo)

https://doi.org/10.7567/SSDM.1994.PB-2-3

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