Surface Nitridation Process of (100) GaAs by NH3-Plasma Treatment with Planar Magnetic Field

Atsushi MASUDA; Yasuto YONEZAWA; Akiharu MORIMOTO; Tatsuo SHIMIZU

doi:https://doi.org/10.7567/SSDM.1994.PB-2-5

[PB-2-5] Surface Nitridation Process of (100) GaAs by NH3-Plasma Treatment with Planar Magnetic Field

Atsushi MASUDA、Yasuto YONEZAWA、Akiharu MORIMOTO、Tatsuo SHIMIZU (1.Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University、2.Industrial Research Institute of Ishikawa Prefecture)

https://doi.org/10.7567/SSDM.1994.PB-2-5

1994 International Conference on Solid State Devices and Materials

[PB-2-5] Surface Nitridation Process of (100) GaAs by NH3-Plasma Treatment with Planar Magnetic Field