Surface Nitridation Process of (100) GaAs by NH3-Plasma Treatment with Planar Magnetic Field

Atsushi MASUDA; Yasuto YONEZAWA; Akiharu MORIMOTO; Tatsuo SHIMIZU

doi:https://doi.org/10.7567/SSDM.1994.PB-2-5

[PB-2-5] Surface Nitridation Process of (100) GaAs by NH3-Plasma Treatment with Planar Magnetic Field

Atsushi MASUDA, Yasuto YONEZAWA, Akiharu MORIMOTO, Tatsuo SHIMIZU (1.Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University, 2.Industrial Research Institute of Ishikawa Prefecture)

https://doi.org/10.7567/SSDM.1994.PB-2-5

1994 International Conference on Solid State Devices and Materials

[PB-2-5] Surface Nitridation Process of (100) GaAs by NH3-Plasma Treatment with Planar Magnetic Field