[PB-2-7] Investigation of Surface Damage in GaInAs/GaInAsP/InP Wire Structures by Low-Energy-Reactive-Ion Assisted Radical Etching

Munehisa TAMURA、Yasuaki NAGASHIMA、Koji KUDO、Ki-Chul SHIN Shigeo TAMURA、Akinori UBUKATA、Shigehisa ARAI (1.Department of Physical Electronics, Tokyo Institute of Technology、2.Technology Devision, Tsukuba Laboratory, Nippon Sanso Co.)

https://doi.org/10.7567/SSDM.1994.PB-2-7