InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with a Ultra-High Carbon-Doped Base (p=1.5×1021cm-3)

Jun-ichi SHIRAKASHI; Toshiaki AZUMA; Fumihiko FUKUCHI; Makoto KONAGAI; Kiyoshi TAKAHASHI

doi:https://doi.org/10.7567/SSDM.1994.PC-1-3

[PC-1-3] InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with a Ultra-High Carbon-Doped Base (p=1.5×1021cm-3)

Jun-ichi SHIRAKASHI、Toshiaki AZUMA、Fumihiko FUKUCHI、Makoto KONAGAI、Kiyoshi TAKAHASHI (1.Department of Electrical and Electronic Engineering, Department of Physical Electronics, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1994.PC-1-3

1994 International Conference on Solid State Devices and Materials

[PC-1-3] InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with a Ultra-High Carbon-Doped Base (p=1.5×1021cm-3)