[PC-1-4] Numerical Simulation on the Device Structure of GaAs Floated Electron Channel Field Effect Transistor (FECFET)

Y. J. Lee、C. T. Kim、S. C. Hong、Y. S. Kwon、H. K. Yoon、K. H. Oh (1.Semiconductor R&D Lab. 1., Hyundai Electronics Industries Co., Ltd.、2.Goldstar Co., Ltd.、3.Dept. of EE, KAIST)

https://doi.org/10.7567/SSDM.1994.PC-1-4