[PC-1-4] Numerical Simulation on the Device Structure of GaAs Floated Electron Channel Field Effect Transistor (FECFET)

Y. J. Lee, C. T. Kim, S. C. Hong, Y. S. Kwon, H. K. Yoon, K. H. Oh (1.Semiconductor R&D Lab. 1., Hyundai Electronics Industries Co., Ltd., 2.Goldstar Co., Ltd., 3.Dept. of EE, KAIST)

https://doi.org/10.7567/SSDM.1994.PC-1-4