Low Energy Bias Sputtering Filling of SiO2 into High Aspect Ratio Trench Employing Axially Confined Helicon Wave Plasma

G. Sadakuni; Y. Kobayashi; H. Shindo; T. Fukazawa; H. Sakaue; S. Shingubara; Y. Horiike

doi:https://doi.org/10.7567/SSDM.1994.PD-1-4

[PD-1-4] Low Energy Bias Sputtering Filling of SiO2 into High Aspect Ratio Trench Employing Axially Confined Helicon Wave Plasma

G. Sadakuni, Y. Kobayashi, H. Shindo, T. Fukazawa, H. Sakaue, S. Shingubara, Y. Horiike (1.Department of Electric and Electronic Engineering, Toyo University, 2.Department of Electrical Engineering, Hiroshima University and, 3.Department of Electrical Engineering, Fukuyama University)

https://doi.org/10.7567/SSDM.1994.PD-1-4

1994 International Conference on Solid State Devices and Materials

[PD-1-4] Low Energy Bias Sputtering Filling of SiO2 into High Aspect Ratio Trench Employing Axially Confined Helicon Wave Plasma