[PD-4-1] High Rate Selective Etching of a-Si:H and Modification Effect of a-SiNx:H Surface by Hydrogen Radical

Hiroshi NAGAYOSHI、Misako YAMAGUCHI、Makoto IKEDA、Yuichi YAMAMOTO、Koichi KAMISAKO、Yasuo TARUI (1.Division of Electronic and Information Engineering, Faculty of Technology Tokyo University of Agriculture and Technology、2.School of Science and Engineering, Waseda University)

https://doi.org/10.7567/SSDM.1994.PD-4-1