[S-I-2-4] Improvements in the Electrical Activity of Nitrogen Doped P-Type ZnSe Due to InGaP Buffer Layer

S. Saito、Y. Nishikawa、J. Rennie、M. Onomura、P. J. Parbrook、K. Nitta、M. Ishikawa、G. Hatakoshi (1.Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1994.S-I-2-4