Improvements in the Electrical Activity of Nitrogen Doped P-Type ZnSe Due to InGaP Buffer Layer

S. Saito; Y. Nishikawa; J. Rennie; M. Onomura; P. J. Parbrook; K. Nitta; M. Ishikawa; G. Hatakoshi

doi:https://doi.org/10.7567/SSDM.1994.S-I-2-4

[S-I-2-4] Improvements in the Electrical Activity of Nitrogen Doped P-Type ZnSe Due to InGaP Buffer Layer

S. Saito, Y. Nishikawa, J. Rennie, M. Onomura, P. J. Parbrook, K. Nitta, M. Ishikawa, G. Hatakoshi (1.Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1994.S-I-2-4

1994 International Conference on Solid State Devices and Materials

[S-I-2-4] Improvements in the Electrical Activity of Nitrogen Doped P-Type ZnSe Due to InGaP Buffer Layer