[S-I-3-3] Observation of Positively Charged Trap Site in Silicon Oxide Layer with an Atomic Force Microscope

Yoshinobu FUKANO、Takahiro OKUSAKO、Takayuki UCHIHASHI、Yasuhiro SUGAWARA、Yoshiki YAMANISHI、Takahiko OASA、Seizo MORITA (1.Department of Physics, Faculty of Science, Hiroshima University、2.Advanced Technology Research Lab., Sumitomo Metal Industries, Ltd.)

https://doi.org/10.7567/SSDM.1994.S-I-3-3