Electron-Beam Induced Etching as a Key Process in Through-Vacuum Fabrication of GaAs-AlGaAs Nanoheterostructures

Yoshifumi KATAYAMA; Tomonori ISHIKAWA; Nobuyuki TANAKA; Maximo LOPEZ; Isamu MATSUYAMA; Yuichi IDE; Masamichi YAMADA

doi:https://doi.org/10.7567/SSDM.1994.S-I-8-1

[S-I-8-1] Electron-Beam Induced Etching as a Key Process in Through-Vacuum Fabrication of GaAs-AlGaAs Nanoheterostructures

Yoshifumi KATAYAMA、Tomonori ISHIKAWA、Nobuyuki TANAKA、Maximo LOPEZ、Isamu MATSUYAMA、Yuichi IDE、Masamichi YAMADA (1.Opotelectronics Technology Research Laboratory (OTL))

https://doi.org/10.7567/SSDM.1994.S-I-8-1

1994 International Conference on Solid State Devices and Materials

[S-I-8-1] Electron-Beam Induced Etching as a Key Process in Through-Vacuum Fabrication of GaAs-AlGaAs Nanoheterostructures