DLTS Study of Deep Levels in Si-Doped InxAl1-xAs Layers Grown by Molecular Beam Epitaxy

H. Tomozawa; A. Malinin; T. Hashizume; H. Hasegawa

doi:https://doi.org/10.7567/SSDM.1994.S-I-9-5

1994 International Conference on Solid State Devices and Materials

1994年8月23日〜 1994年8月26日
Pacifico Yokohama, Yokohama, Japan

[S-I-9-5] DLTS Study of Deep Levels in Si-Doped InxAl1-xAs Layers Grown by Molecular Beam Epitaxy

H. Tomozawa、A. Malinin、T. Hashizume、H. Hasegawa (1.Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University)

https://doi.org/10.7567/SSDM.1994.S-I-9-5

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