[S-II-3] Extremely High Selective Etching of Porous Si for Single Etch-Stop Bond-and-Etch-Back SOI

K. Sakaguchi、N. Sato、K. Yamagata、Y. Fujiyama、T. Yonehara (1.Device Development Center, Canon Inc.)

https://doi.org/10.7567/SSDM.1994.S-II-3