Stress-Induced Anomalous Growth in Lateral Solid Phase Epitaxy of Ge-Incorporated Si Films

J. H. OH; D. Y. KIM; H. ISHIWARA

doi:https://doi.org/10.7567/SSDM.1994.S-II-4

1994 International Conference on Solid State Devices and Materials

1994年8月23日〜 1994年8月26日
Pacifico Yokohama, Yokohama, Japan

[S-II-4] Stress-Induced Anomalous Growth in Lateral Solid Phase Epitaxy of Ge-Incorporated Si Films

J. H. OH、D. Y. KIM、H. ISHIWARA (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology、2.Process Development Dept. SamSung Electronics)

https://doi.org/10.7567/SSDM.1994.S-II-4

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