[A-1-5] Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO2 Chemical Vapor Deposition

Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Yoko Tada, Yuji Kataoka, Hiroshi Arimoto, Kei Horiuchi (1.Fujitsu Laboratories Ltd.)

https://doi.org/10.7567/SSDM.1998.A-1-5