[A-1-5] Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO2 Chemical Vapor Deposition

Takayuki Aoyama、Kunihiro Suzuki、Hiroko Tashiro、Yoko Tada、Yuji Kataoka、Hiroshi Arimoto、Kei Horiuchi (1.Fujitsu Laboratories Ltd.)

https://doi.org/10.7567/SSDM.1998.A-1-5