[A-10-2] COP-Free Silicon Surfaces by Rapid Thermal Annealing (RTA) in a H2/Ar Mixture Ambient Using High Growth Rate Crystals

Norihiro Kobayashi、Shoji Akiyama、Masahiro Kato、Takao Abe (1.Isobe R&D Center, Shin-Etsu Handotai)

https://doi.org/10.7567/SSDM.1998.A-10-2