[A-2-1] Charge-Free and Dopant Dependence-Free Etching Processes Using Non-Maxwellian Electron Energy Distributions in Ultra-High-Frequency Plasma

Seiji Samukawa、Hiroto Ohtake、Ko Noguchi (1.Silicon Systems Research Laboratories、2.ULSI Device Development Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1998.A-2-1