[A-2-3] Ultra-Low-Temperature Formation of Si Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment

Yuji Saito、Katsuyuki Sekine、Masaki Hirayama、Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University)

https://doi.org/10.7567/SSDM.1998.A-2-3