[A-3-1] MOSFETs with nm-Thick Gate SiO2 Grown at Low Temperatures Utilizing Activated Oxygen

T. Fuyuki, T. Futatsuyama, Y. Ueda, K. Moriizumi, H. Matsunami (1.Department of Electronic Science and Engineering, Kyoto University, 2.Graduate School of Material Science, Nara Institute of Science and Technology)

https://doi.org/10.7567/SSDM.1998.A-3-1