[A-4-1] Evaluation of Interface SiOx Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO2-Si Diode

Osamu Maida、Norio Okada、Takeshi Kanashima、Masanori Okuyama (1.Department of Physical Science, Graduate School of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.1998.A-4-1